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SGP30N60 SGW30N60
Fast IGBT in NPT-technology
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C
G
E
PG-TO-220-3-1
PG-TO-247-3
* Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP30N60 SGW30N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 C Ptot 250 W tSC 10 s VGE EAS 20 165 V mJ ICpuls Symbol VCE IC 41 30 112 112 Value 600 Unit V A VCE 600V 600V IC 30A 30A VCE(sat) 2.5V 2.5V Tj 150C 150C Marking G30N60 G30N60 Package PG-TO-220-3-1 PG-TO-247-3
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 Sep. 08
SGP30N60 SGW30N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 0.5 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 A VCE(sat) V G E = 15 V, I C =30A T j = 25C T j = 150 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =700 A,V C E =V G E V C E = 60 0 V,V G E = 0 V T j = 25C T j = 150 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2.1 2.5 4 20 1600 150 92 140 7 13 300 max. 2.4 3.0 5
Unit
V
A 40 3000 100 1920 180 110 182 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0 V , V G E =20V V C E =20V, I C =30A V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =30A V G E =15V PG-TO-220-3-1 PG-TO-247-3-21 V G E =15V,t S C 1 0 s V C C 60 0V, T j 150 C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.4 Sep. 08
SGP30N60 SGW30N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 11 , L 1 ) =1 80nH , C 1 ) =9 00p F Energy losses include "tail" and diode reverse recovery. 44 34 291 58 0.64 0.65 1.29 53 40 349 70 0.77 0.85 1.62 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 150 C V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 1 , L 1 ) =1 80nH , C 1 ) =9 00p F Energy losses include "tail" and diode reverse recovery. 44 34 324 67 0.98 0.92 1.90 53 40 389 80 1.18 1.19 2.38 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.4 Sep. 08
SGP30N60 SGW30N60
160A 140A 120A
Ic
100A
tp=4s 15s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
100A 80A TC=80C 60A 40A 20A 0A 10Hz TC=110C
10A
50s 200s 1ms
1A DC
Ic
0.1A 1V 10V 100V
100Hz
1kHz
10kHz
100kHz
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
300W
60A
250W
50A
Limited by bond wire
200W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISSIPATION
40A
150W
30A
100W
20A
Ptot,
50W
10A
0W 25C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
90A 80A 70A 90A 80A 70A
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V
IC, COLLECTOR CURRENT
VGE=20V 15V 13V 11V 9V 7V 5V
60A 50A 40A 30A 20A 10A 0A 0V
VGE=20V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
90A 80A
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
100A
4.0V
3.5V
IC = 60A
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V
3.0V
2.5V
IC = 30A
2.0V
1.5V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
1000ns
1000ns td(off)
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf td(on) tr
td(on) tr
10ns
10A
20A
30A
40A
50A
60A
10ns 0
10
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)
1000ns
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50C 0C 50C 100C 150C typ. max.
td(off)
t, SWITCHING TIMES
100ns tf tr td(on)
min.
10ns 0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
6
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
5.0mJ 4.5mJ
*) Eon and Ets include losses due to diode recovery.
4.0mJ
Ets*
3.5mJ
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
4.0mJ 3.5mJ 3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 10A 20A 30A 40A 50A 60A 70A Eon* Eoff
3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 0 Eoff Eon* Ets*
10
20
30
40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)
3.0mJ
10 K/W
0
2.5mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
D=0.5
-1
E, SWITCHING ENERGY LOSSES
10 K/W
0.2 0.1 0.05
2.0mJ
Ets*
1.5mJ Eon* Eoff 0.5mJ
10 K/W 0.01
-3
-2
0.02
1.0mJ
10 K/W single pulse
R,(1/W) 0.3681 0.0938 0.0380
R1
, (s) 0.0555 -3 1.26*10 -4 1.49*10
R2
C 1= 1/R 1
C 2= 2/R 2
0.0mJ 0C
50C
100C
150C
10 K/W 1s
-4
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
25V
20V
120V 480V
1nF
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
C, CAPACITANCE
Coss 100pF Crss
10V
5V
0V 0nC
50nC
100nC
150nC
200nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 30A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
500A
tsc, SHORT CIRCUIT WITHSTAND TIME
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
450A 400A 350A 300A 250A 200A 150A 100A 50A 0A 10V 12V 14V 16V 18V 20V
15 s
10 s
5 s
0 s 10V
11V
12V
13V
14V
15V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
PG-TO-220-3-1
9
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
10
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH a nd Stray capacity C =900pF.
11
Rev. 2.4
Sep. 08
SGP30N60 SGW30N60
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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12
Rev. 2.4
Sep. 08

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